NTE5416 NTE ELECTRONICS, NTE5416 Datasheet - Page 2

• Manufacturer Part Number: NTE5416
• Description: SILICON CONTROLLED RECTIFIER,600V V(DRM),4A I(T),TO-126
• Manufacturer: NTE ELECTRONICS

Specifications of NTE5416

• Rohs Compliant: YES

Absolute Maximum Ratings (Cont’d): (T
Average Gate Power (t = 8.2ms, T
Peak Forward Gate Current, I
Peak Reverse Gate Voltage, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Mounting Torque (Note 2)
Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of
Electrical Characteristics: (T
Note 3. Pulse Width = 1ms to 2ms, Duty Cycle = 2%.
Note 4. Measurement does not include R
Peak Forward or Reverse
Peak Forward “ON” Voltage
Gate Trigger Current
Gate Trigger Voltage
Gate Non–Trigger Voltage
Holding Current
Total Turn–On Time
Forward Voltage Application Rate
Blocking Current
(Continuous DC, Note 4)
(Continuous DC)
6 in. lb. does not appreciably lower case–to–sink thermal resistance. Anode lead and heat-
sink contact pad are common.
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
RGM
stg
C
Symbol
I
dv/dt
I
= +25 C, R
DRM
V
V
V
RRM
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t
GT
I
TM
GD
C
GT
gt
H
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +90 C), P
,
Rated V
Rated V
I
V
V
Source Voltage = 12V, R
V
V
T
V
Initiating On–State Current = 200mA,
T
Source Voltage = 12V, R
I
Rise Time = 20ns, Pulse Width = 10 s
V
TM
TM
AK
AK
AK
AK
C
AK
C
D
GK
J
thJC
= +110 C
= –40 C
= Rated V
C
= 8.2A Peak, Note 3
= 8.2A, I
= 12V, R
= 12V, R
= 12V, R
= Rated V
= 12V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GK
= +110 C unles otherwise specified)
current.
thJA
DRM
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1000
G(AV)
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GT
GT
or V
or V
L
L
L
DRM
DRM
= 24
= 24
= 24
= 2mA, T
= 2mA, Rated V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
RRM
, T
, R
C
unles otherwise specified)
, T
, T
L
T
T
= +110 C
= 100
C
C
C
C
C
S
S
= –40 C
= –40 C
= +25 C
= +110 C
= +25 C
= 50 ,
= 6k ,
DRM
,
Min
0.2
–
–
–
–
–
–
–
–
–
–
Typ
10
–
–
–
–
–
–
–
–
–
2
–40 to +150 C
–40 to +110 C
Max
200
200
500
2.2
10
10
1
–
5
–
–
75 C/W
6 in. lb.
3 C/W
V/ s
Unit
0.1W
mA
mA
0.2A
V
V
V
A
A
A
A
s
6V