NTE5403 NTE ELECTRONICS, NTE5403 Datasheet - Page 2
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NTE5403
Manufacturer Part Number
NTE5403
Description
SILICON CONTROLLED RECTIFIER,150V V(DRM),800mA I(T),TO-92
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5403.pdf
(2 pages)
Electrical Characteristics:
Peak Off–State Current
Maximum On–State Voltage
DC Holding Current
DC Gate–Trigger Current
DC Gate–Trigger Voltage
I
Critical Rate of Applied
2
t for Fusing Reference
Forward Voltage
Parameter
.105 (2.67) Max
.205 (5.2) Max
Symbol
(critical)
.100 (2.54)
I
I
dv/dt
I
DRXM
HOLD
V
V
RRM
I
(5.33)
(12.7)
I
GT
.210
Max
.500
TM
Min
GT
2
t
V
T
T
T
V
V
> 1.5msoc
T
C
C
C
C
RRM
D
D
= +100 C, R
= +25 C, I
= +25 C
= +100 C
= 6VDC, R
= 6VDC, R
= Max, V
K G A
Test Conditions
T
L
L
DRXM
= 1.2A (Peak)
G–K
= 100 , T
= 100 , T
= 1k
.135 (3.45) Min
.050 (1.27)
= Max,
.105 (2.67) Max
C
C
.021 (.445) Dia Max
= +25 C
= +25 C
.165 (4.2) Max
Seating
Plane
Min
–
–
–
–
–
–
–
–
Typ
50
–
–
–
–
–
–
5
Max
0.15 A
200
1.7
0.8
50
50
5
–
Unit
V/ s
mA
2
V
V
sec
A
A
A