NTE5381 NTE ELECTRONICS, NTE5381 Datasheet - Page 2

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NTE5381

Manufacturer Part Number
NTE5381
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),400A I(T),TO-200AB
Manufacturer
NTE ELECTRONICS
Datasheet
Electrical Characteristics (Cont’d):
On−State Conduction (Cont’d)
Forward Slope Resistance,
Forward Slope Resistance,
Maximum Holding Current
Typical Latching Current
Switching
Max. Non−Repetitive Rate of
Typical Delay Time
Max. Turn−Off Time
Blocking
Maximum Critical Rate of Rise
Max. Peak Reverse and
Triggering
Maximum Peak Gate Power
Maximum Average Gate Power
Max. Peak Positive Gate Current
Max. Peak Positive Gate Voltage
Max. Peak Negative Gate Voltage
Max. DC Gate Current Required
Max. DC Gate Voltage Required
Max. DC Gate Current not to
Max. DC Gate Voltage not to
Low Level
High Level
Rise of Turned−On Current
of Off−State Voltage
Off−State Leakage Current
to Trigger
to Trigger
Trigger
Trigger
Parameter
.030 (.762) Min
(14.22)
.030 (.762) Min
.560
(41.91)
1.650
Symbol
Max
P
+V
−V
I
dv/dt
I
P
di/dt
RRM
V
V
DRM
G(AV)
I
I
I
r
r
GM
GD
I
GT
I
t
t
GM
GT
GD
t1
t2
H
L
d
p
GM
GM
,
(16.7% x  x I
(I >  x I
T
T
T
T
Resistive Load, gate Pulse: 10V, 5 Source
T
V
T
T
T
T
T
T
T
T
T
J
J
J
J
J
R
J
J
J
J
J
J
J
J
J
(41.91)
(19.18)
= +25C, I
= +25C, V
= +125C, V
= +125C, V
= +125C, I
= +125C, Linear to 80% V
= +125C, V
= +125C, f = 50Hz, d% = 50
= +125C, t
= +125C, t
= +25C, V
= +25C, V
= +125C, Rated V
= +125C, Rated V
1.650
= 50V, t
.755
Max
Max
T(AV)
p
= 500s, dv/dt = 500V/s
), T
T(AV)
T
A
A
A
TM
p
p
DRM
DRM
DRM
> 30A
= 12V, R
= 12V, R
= 12V, R
 5ms
 5ms
J
8.500 (21.59)
.145 (3.7) Dia Max
= 30A, Commutating di/dt = 20A/s,
= +125C
Test Conditions
Cathode
< I <  x I
/V
= 600V, I
= 600V, I
For No. 6
RRM
Max
DRM
DRM
Screws
Cathode Potential (Red)
a
a
a
Marking
= 6, I
= 6
= 6
Applied
Applied
Applied
Anode
Gate (White)
T(AV)
TM
TM
DRM
= 2 x di/dt
= 50A DC, t
G
), T
= 1A
J
= +125C
p
= 1s,
15 − 30
Rating
1000
1000
0.87
0.77
0.25
600
500
150
1.1
40
60
10
10
20
20
5
3
A/s
V/s
Unit
m
m
mA
mA
mA
mA
mA
s
s
W
W
A
V
V
V
V

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