S2N1RP Littelfuse Inc, S2N1RP Datasheet - Page 2
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S2N1RP
Manufacturer Part Number
S2N1RP
Description
SCR THYRISTOR, 640mA, 200V TO-263AA
Manufacturer
Littelfuse Inc
Datasheet
1.S2008L.pdf
(12 pages)
Specifications of S2N1RP
Peak Repetitive Off-state Voltage, Vdrm
200V
Gate Trigger Current Max, Igt
10mA
Current It Av
640mA
On State Rms Current It(rms)
1A
Peak Non Rep Surge Current Itsm 50hz
25A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SCRs
Specific Test Conditions
di/dt — Maximum rate-of-rise of on-state current; I
dv/dt — Critical rate of applied forward voltage
I
I
I
I
I
I
I
P
P
t
t
http://www.littelfuse.com
+1 972-580-7777
2
DRM
gt
GM
H
T
TSM
gt
q
t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
G(AV)
GM
TYPE
— Maximum on-state current
— dc holding current; gate open
— Circuit commutated turn-off time
— dc gate trigger current; V
— Gate controlled turn-on time; gate pulse = 100 mA; minimum
10 A
12 A
1 A
6 A
8 A
— Peak gate current
≤ 0.1 µs rise time
for fusing
V
devices and 30 Ω for 20 to 70 A devices
width = 15 µs with rise time ≤ 0.1 µs
— Peak one-cycle forward surge current
— Peak gate power dissipation
and I
RRM
— Average gate power dissipation
RRM
S201E
S401E
S601E
— Peak off-state forward and reverse current at V
TO-92
K
G
A
K
SK006L
SK008L
SK010L
Isolated
TO-220
S2006L
S4006L
S6006L
S8006L
S2008L
S4008L
S6008L
S8008L
S2010L
S4010L
S6010L
S8010L
A
D
G
= 12 V dc; R
See “Package Dimensions” section for variations. (11)
S2006F1
S4006F1
S6006F1
S2008F1
S4008F1
S6008F1
S2010F1
S4010F1
S6010F1
K
TO-202
A
L
G
A
= 60 Ω for 1 to 16 A
GT
Part Number
K
SK008R
SK010R
SK012R
S2008R
S4008R
S6008R
S8008R
S2010R
S4010R
S6010R
S8010R
S2012R
S4012R
S6012R
S8012R
TO-220
= 150 mA with
A
A
G
DRM
Non-isolated
K
SK006V
SK008V
SK010V
SK012V
S2006V
S4006V
S6006V
S8006V
S2008V
S4008V
S6008V
S8008V
S2010V
S4010V
S6010V
S8010V
S2012V
S4012V
S6012V
S8012V
TO-251
V-Pak
and
A
A
E6 - 2
G
V
V
V
General Notes
•
•
•
•
•
DRM
gt
TM
K
Compak
G
S2N1
S4N1
S6N1
— DC gate trigger voltage; V
devices and 30 Ω for 20 to 70 A devices
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Operating temperature range (T
devices and -40 °C to +125 °C for all other packages.
Storage temperature range (T
devices, -40 °C to +150 °C for TO-202 and TO-220 devices, and
-40 °C to +125 °C for all others.
Lead solder temperature is a maximum of 230 °C for 10 seconds
maximum; ≥1/16" (1.59 mm) from case.
The case temperature (T
outline drawings in the “Package Dimensions” sectionof this
catalog.
— Peak on-state voltage at maximum rated RMS current
and V
A
RRM
A
— Repetitive peak off-state forward and reverse voltage
SK006D
SK008D
SK010D
SK012D
S2006D
S4006D
S6006D
S8006D
S2008D
S4008D
S6008D
S8008D
S2010D
S4010D
S6010D
S8010D
S2012D
S4012D
S6012D
S8012D
TO-252
D-Pak
K
A
G
C
I
) is measured as shown on dimensional
T(RMS)
MAX
10
10
10
10
10
12
12
12
12
12
1
1
1
6
6
6
6
6
8
8
8
8
8
D
(1) (2) (15)
S
= 12 V dc; R
) is -65 °C to +150 °C for TO-92
Amps
J
I
) is -65 °C to +125 °C for TO-92
T
I
MAX
0.64
0.64
0.64
T(AV)
3.8
3.8
3.8
3.8
3.8
5.1
5.1
5.1
5.1
5.1
6.4
6.4
6.4
6.4
6.4
7.6
7.6
7.6
7.6
7.6
Thyristor Product Catalog
L
& V
= 60 Ω for 1 to 16 A
V
Volts
1000
1000
1000
1000
©2004 Littelfuse, Inc.
MIN
200
400
600
200
400
600
800
200
400
600
800
200
400
600
800
200
400
600
800
DRM
RRM
Data Sheets
MIN
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
mAmps
I
(4)
GT
MAX
10
10
10
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
20
20
20
20
20