SUD06N10-225L-T1-E3 Vishay, SUD06N10-225L-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD06N10-225L-T1-E3
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SUD06N10-225L-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 1.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?71253.
www.vishay.com
SUD06N10-225L
Vishay Siliconix
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
THERMAL RATINGS
Maximum Avalanche Drain Current vs. Case Temperature
0.01
0.1
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
2
1
0
−50 −25
10
On-Resistance vs. Junction Temperature
−5
V
I
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
D
GS
25
= 3 A
= 10 V
T
J
T
0
50
C
− Junction Temperature (_C)
− Case Temperature (_C)
Single Pulse
25
10
−4
75
50
100
75
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
10
−3
125
150
150
175
Square Wave Pulse Duration (sec)
For related documents such as package/tape drawings, part marking, and reliability data, see
175
10
−2
0.1
10
10
1
0.1
−1
10
*Limited by r
1
*V
GS
0
u minimum V
V
Source-Drain Diode Forward Voltage
DS
0.2
DS(on)
Single Pulse
V
− Drain-to-Source Voltage (V)
T
Safe Operating Area
SD
C
1
= 25_C
1
− Source-to-Drain Voltage (V)
T
GS
J
0.4
= 175_C
at which r
0.6
DS(on)
S−42350—Rev. B, 20-Dec-04
10
10
Document Number: 71253
is specified
0.8
T
J
= 25_C
1.0
100
100
10 ms
100 ms
1 ms
10 ms
100 ms
1 s, dc
1.2