SI8409DB-T1-E1 Vishay, SI8409DB-T1-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8409DB-T1-E1
• Description: P CH MOSFET, -30V, 6.3A, MICRO FOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8409DB-T1-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6.3A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Power - Max: 1.47W
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.046 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 1470 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8409DB-T1-E1TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73111
S-82118-Rev. B, 08-Sep-08
0.01
0.1
2
1
10
- 4
0.05
0.02
Duty Cycle = 0.5
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0.1
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si8409DB
www.vishay.com
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