SI7447ADP-T1 Vishay, SI7447ADP-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7447ADP-T1
• Description: P CHANNEL MOSFET, -30V, 14A, SOIC
• Manufacturer: Vishay

Specifications of SI7447ADP-T1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -14A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 71970
S-21475—Rev. A, 26-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
100
0.1
10
10
1
8
6
4
2
0
0.00
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
20
= 24 A
0.2
On-Resistance vs. Drain Current
T
V
10
= 15 V
J
SD
= 150_C
Q
- Source-to-Drain Voltage (V)
g
I
0.4
D
40
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
20
60
0.6
V
GS
30
= 10 V
80
0.8
T
J
= 25_C
40
100
1.0
1.2
120
50
New Product
10000
0.020
0.016
0.012
0.008
0.004
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
-25
V
I
D
rss
GS
= 24 A
V
2
6
= 10 V
DS
V
T
J
GS
0
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
4
12
Vishay Siliconix
50
C
C
I
D
iss
oss
= 24 A
6
18
75
Si7447DP
100
www.vishay.com
8
24
125
10
150
30
3