SI5445BDC-T1-GE3 Vishay, SI5445BDC-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI5445BDC-T1-GE3
• Description: P CHANNEL MOSFET, -8V, 71A, 1206
• Manufacturer: Vishay

Specifications of SI5445BDC-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -71A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73251
S-83054-Rev. B, 29-Dec-08
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.2 A
V
GS
0.2
On-Resistance vs. Drain Current
= 10 V
3
4
= 1.8 V
V
Q
SD
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
I
6
D
- Drain Current (A)
Gate Charge
8
T
J
= 150 °C
0.6
9
12
12
0.8
T
J
= 25 °C
V
V
GS
GS
16
15
1.0
= 2.5 V
= 4.5 V
18
20
1.2
2000
1600
1200
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
400
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
I
D
GS
1
= 5.2 A
= 2 A
C
= 4.5 V
iss
1
V
V
DS
GS
T
2
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
3
I
2
D
C
oss
= 5.2 A
50
4
Vishay Siliconix
Si5445BDC
3
75
5
www.vishay.com
100
6
4
125
7
150
8
5
3