SI4833ADY-T1-GE3 Vishay, SI4833ADY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4833ADY-T1-GE3
• Description: P CHANNEL MOSFET, -30V, 4.6A, SOIC
• Manufacturer: Vishay

Specifications of SI4833ADY-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -4.6A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
- 0.2
- 0.4
0.6
0.4
0.2
0.0
10
1
- 50
0.2
I
D
Source-Drain Diode Forward Voltage
- 25
= 250 µA
0.4
V
SD
0
V
SD
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
J
25
- Temperature (°C)
0.6
50
0.01
100
0.8
0.1
10
75
1
0.1
by R
Limited
V
* V
SD
100
DS(on)
Safe Operating Area, Junction-to-Case
Single Pulse
T
GS
= 25 °C
1.0
A
Limited
I
D(on)
= 25 °C
*
125
minimum V
V
DS
- Drain-to-Source Voltage (V)
150
1
1.2
GS
BVDSS Limited
at which R
I
DM
10
DS(on)
Limited
is specified
0.3
0.2
0.1
0.0
50
40
30
20
10
1 ms
0
10 ms
100 ms
1 s
10 s
DC
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
2
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
Si4833ADY
6
www.vishay.com
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