IRFR5305 International Rectifier, IRFR5305 Datasheet - Page 7

• Manufacturer Part Number: IRFR5305
• Description: P CHANNEL MOSFET, -55V, 31A, D-PAK
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFR5305

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -31A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 31A
• Power Dissipation: 110W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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V
GS
*
Re-Applied
Voltage
Reverse
Recovery
Current

*
** Use P-Channel Driver for P-Channel Measurements
Reverse Polarity for P-Channel
‚
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple
Body Diode
Period
**
Body Diode Forward
+
-
ƒ
D.U.T. - Device Under Test
dv/dt controlled by R
I
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
di/dt
D =
-
G
Period
„
P.W.
+
[
[
[
V
V
I
SD
IRFR/U5305
GS
DD
]
]
=10V
+
-
V
] ***
DD
*
7