IRF9Z20PBF Vishay, IRF9Z20PBF Datasheet

P CHANNEL MOSFET, -50V, 9.7A TO-220

IRF9Z20PBF

Manufacturer Part Number
IRF9Z20PBF
Description
P CHANNEL MOSFET, -50V, 9.7A TO-220
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of IRF9Z20PBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-9.7A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 5.6A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
480pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.7 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9Z20PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9Z20PBF
Manufacturer:
Vishay/Siliconix
Quantity:
1 863
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
c. 0.063" (1.6 mm) from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90121
S11-0511-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche Current)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
DD
(Max.) (nC)
(nC)
(V)
(nC)
= - 25 V, starting T
()
TO-220AB
G
a
D
S
J
= 25 °C, L =100 μH, R
V
GS
= - 10 V
G
P-Channel MOSFET
Single
- 50
6.2
8.6
26
This datasheet is subject to change without notice.
g
C
= 25 
S
D
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.28
GS
at - 10 V
L = 100 μH
T
C
for 10 s
= 25 °C
T
T
C
C
TO-220AB
IRF9Z20PbF
SiHF9Z20-E3
IRF9Z20
SiHF9Z20
= 100 °C
= 25 °C
FEATURES
• P-Channel Versatility
• Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The P-channel Power MOSFET’s are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel Power MOSFET’s such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel Power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
SYMBOL
T
J
V
V
I
I
P
, T
DM
I
LM
I
DS
GS
D
L
D
stg
IRF9Z20, SiHF9Z20
- 55 to + 150
LIMIT
± 20
- 9.7
- 6.1
0.32
- 2.2
300
- 50
- 39
- 39
40
www.vishay.com/doc?91000
Vishay Siliconix
c
www.vishay.com
UNIT
W/°C
RoHS*
COMPLIANT
°C
W
V
A
A
A
Available
1

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IRF9Z20PBF Summary of contents

Page 1

... They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. TO-220AB IRF9Z20PbF SiHF9Z20-E3 IRF9Z20 SiHF9Z20 = 25 °C, unless otherwise noted) C ...

Page 2

... IRF9Z20, SiHF9Z20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ...

Page 3

... S11-0511-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH µs Pulse Test - 90121_03 0 90121_04 Fig Maximum Safe Operating Area This datasheet is subject to change without notice. IRF9Z20, SiHF9Z20 Vishay Siliconix 80 µs Pulse Test - Negative V Drain-to-Source Voltage ( Fig ...

Page 4

... IRF9Z20, SiHF9Z20 Vishay Siliconix 5.0 80 µs Pulse Test < 4 150 J 3.0 2.0 1.0 0 Negative I Drain Current ( 90121_06 Fig Typical Transconductance vs. Drain Current ° 150 ° 0 Negative V , Source-to-Drain Voltage (V) 90121_07 SD Fig Typical Source-Drain Diode Forward Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1.25 ° ...

Page 5

... Fig Typical On-Resistance vs. Drain Current For test circuit see figure 90121_13 Fig Maximum Drain Current vs. Case Temperature This datasheet is subject to change without notice. IRF9Z20, SiHF9Z20 Vishay Siliconix 80 µs Pulse Test Negative I , Drain Current (A) D IRF9Z20, SiHF9Z20 IRF9Z22, SiHF9Z22 25 50 ...

Page 6

... IRF9Z20, SiHF9Z20 Vishay Siliconix Fig. 13a - Unclamped Inductive Test Circuit 0.5 1 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 (Thermal Response 90121_05 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Fig Switching Time Test Circuit www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig ...

Page 7

... Fig Typical Time to Accumulated 1 % Gate Failure Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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