IRF840STRRPBF Vishay, IRF840STRRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF840STRRPBF
• Description: N CHANNEL MOSFET, 500V, 8A, D2-PAK
• Manufacturer: Vishay

Specifications of IRF840STRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF840S, SiHF840S
Vishay Siliconix
www.vishay.com
4
91071_05
91071_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2500
2000
1500
1000
500
20
16
12
0
8
4
0
10
0
0
I
D
= 8.0 A
V
DS ,
15
Q
Drain-to-Source Voltage (V)
G
V
, Total Gate Charge (nC)
DS
= 100 V
V
30
V
C
C
C
DS
GS
iss
rss
oss
= 250 V
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
10
gs
gd
ds
C
45
1
= 400 V
+ C
C
+ C
C
rss
oss
iss
gd
gd
, C
For test circuit
see figure 13
ds
60
Shorted
75
91071_08
91071_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
Fig. 8 - Maximum Safe Operating Area
1
0
2
5
2
5
2
5
2
1
0.1
0.4
150
2
V
5
°
V
C
DS
SD
0.6
1
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
2
5
10
T
T
Single Pulse
0.8
C
J
by R
= 150 °C
= 25 °C
25
2
DS(on)
°
C
5
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
10
1.0
2
2
5
10
1
100
10
10
1.2
V
ms
µs
ms
3
GS
µs
2
= 0 V
5
10
1.4
4