IRF744 Vishay, IRF744 Datasheet - Page 6

• Manufacturer Part Number: IRF744
• Description: N CHANNEL MOSFET, 450V, 8.8A TO-220
• Manufacturer: Vishay

Specifications of IRF744

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.8A
• Drain Source Voltage Vds: 450V
• On Resistance Rds(on): 630mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF744

IRF744, SiHF744
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
91056_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1200
1000
800
600
400
200
0
25
V
DD
Starting T
= 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
3.9 A
5.6 A
8.8 A
GS
I
Same type as D.U.T.
D
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S-83029-Rev. A, 19-Jan-09
D.U.T.
Document Number: 91056
I
D
+
-
V
DS