IRF634STRRPBF Vishay, IRF634STRRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF634STRRPBF
• Description: N CH MOSFET, 250V, 8.1A, SMD-220
• Manufacturer: Vishay

Specifications of IRF634STRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF634S, SiHF634S
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
DS
SD
DD
Temperature Coefficient
 8.1 A, dI/dt  120 A/μs, V
= 50 V, starting T
a
J
= 25 °C, L = 7.3 mH, R
c
J
= 25 °C, unless otherwise noted)
DD
 V
DS
, T
J
 150 °C.
SYMBOL
SYMBOL
V
g
R
V
t
t
C
= 25 , I
R
I
I
C
R
R
V
DS(on)
C
Q
Q
GS(th)
d(off)
GSS
DSS
d(on)
DS
g
Q
C
L
L
t
t
DS
oss
thJA
thJA
thJC
iss
rss
gs
gd
fs
r
f
D
S
g
/T
= 25 °C, unless otherwise noted)
J
AS
= 8.1 A (see fig. 12).
Between lead,
6 mm (0.25") from
package and center of
die contact
V
V
for 10 s
GS
GS
V
R
DS
g
Reference to 25 °C, I
= 10 V
= 10 V
= 12 , R
= 200 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
TEST CONDITIONS
DD
DS
DS
DS
GS
-
-
-
= 125 V, I
= 250 V, V
= V
= 50 V, I
= 0 V, I
V
V
V
GS
DS
D
GS
GS
I
GS
D
= 22 , see fig. 10
= ± 20 V
= 25 V,
, I
= 5.6 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 μA
D
= 250 μA
I
GS
= 5.1 A
D
SYMBOL
= 5.6 A,
T
= 5.1 A
dV/dt
D
= 0 V
J
, T
J
= 1 mA
DS
= 125 °C
G
stg
b
= 200 V,
b
MAX.
D
S
b
b
1.7
62
40
- 55 to + 150
MIN.
250
2.0
1.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LIMIT
300
4.8
S10-2695-Rev. B, 29-Nov-10
d
Document Number: 91035
TYP.
0.37
770
190
9.6
4.5
7.5
52
21
42
19
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.45
250
4.0
6.5
25
41
22
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/ns
°C
UNIT
V/°C
nC
nH
nA
μA
pF
ns

S
V
V