IRF620STRLPBF Vishay, IRF620STRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRF620STRLPBF
• Description: N CH MOSFET, 200V, 5.2A, SMD-220
• Manufacturer: Vishay

Specifications of IRF620STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91028
S-82998-Rev. B, 12-Jan-09
91028_01
91028_02
Fig. 2 - Typical Output Characteristics, T
10
10
10
10
10
10
10
Fig. 1 - Typical Output Characteristics, T
10
-2
-1
-1
-2
0
1
0
1
10
-2
Top
Bottom
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
V
V
, Drain-to-Source Voltage (V)
10
GS
GS
Drain-to-Source Voltage (V)
-1
-1
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
150 °C
10
10
1
1
C
4.5 V
4.5 V
C
= 150 °C
= 25 °C
91028_03
91028_04
10
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
1
0
- 60 - 40 - 20 0
4
I
V
Fig. 3 - Typical Transfer Characteristics
D
150
GS
= 4.8 A
= 10 V
°
V
C
5
GS ,
T
25
J ,
°
Gate-to-Source Voltage (V)
Junction Temperature (°C)
C
IRF620S, SiHF620S
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
8
DS
=
50 V
9
www.vishay.com
10
3