2N6661 Vishay, 2N6661 Datasheet - Page 3
![N CH MOSFET, 90V, 900mA, TO-205AD](/photos/22/17/221745/4386967_sml.jpg)
2N6661
Manufacturer Part Number
2N6661
Description
N CH MOSFET, 90V, 900mA, TO-205AD
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet
1.2N6661.pdf
(5 pages)
Specifications of 2N6661
Transistor Polarity
N Channel
Continuous Drain Current Id
860mA
Drain Source Voltage Vds
90V
On Resistance Rds(on)
4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.6V
Configuration
Single
Resistance Drain-source Rds (on)
4 Ohms
Drain-source Breakdown Voltage
90 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.9 A
Power Dissipation
6.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Stud
Package / Case
TO-205AD
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
4Ohm
Drain-source On-volt
90V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-205AD
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6661
Manufacturer:
SSI
Quantity:
20 000
Document Number: 70224
S-04279—Rev. C, 16-Jul-01
1.0
0.8
0.6
0.4
0.2
0.5
0.4
0.3
0.2
0.1
10
0
0
8
6
4
2
0
0
0
0
On-Resistance vs. Drain Current
Ohmic Region Characteristics
0.5
1.0
V
2
DS
V
Transfer Characteristics
V
GS
GS
– Drain-to-Source Voltage (V)
I
– Gate-Source Voltage (V)
D
= 10 V
– Drain Current (A)
1.0
2.0
V
4
GS
= 10 V
125_C
25_C
3.0
1.5
6
V
DS
= 15 V
2.0
4.0
8
6 V
5 V
4 V
3 V
2 V
5.0
_
2.5
10
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
80
60
40
20
0
7
6
5
4
3
2
1
0
0
0
–50
Output Characteristics for Low Gate Drive
On-Resistance vs. Gate-to-Source Voltage
V
GS
V
GS
= 3 V
I
D
–10
0.4
V
= 10 V
4
= 0.1 A
Normalized On-Resistance
DS
T
vs. Junction Temperature
V
J
GS
– Drain-to-Source Voltage (V)
– Junction Temperature (_C)
– Gate-Source Voltage (V)
2.8 V
2N6661/VN88AFD
0.8
30
8
2.6 V
2.4 V
2.2 V
2.0 V
1.8 V
Vishay Siliconix
0.5 A
1.2
70
12
www.vishay.com
110
1.6
16
1.0 A
11-3
2.0
150
20