SUB75N08-10-E3 Vishay, SUB75N08-10-E3 Datasheet - Page 4

• Manufacturer Part Number: SUB75N08-10-E3
• Description: N CHANNEL MOSFET, 75V, 75A, TO-263
• Manufacturer: Vishay

Specifications of SUB75N08-10-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUP/SUB75N08-10
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
0.01
0.1
100
2.5
2.0
1.5
1.0
0.5
80
60
40
20
2
1
0
0
–50
0
10
0.02
–5
0.05
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
0.2
0.1
V
I
–25
D
GS
= 30 A
25
= 10 V
T
0
J
T
vs. Case Temperature
50
C
– Junction Temperature ( C)
Single Pulse
– Case Temperature ( C)
25
75
50
10
–4
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
10
–3
Square Wave Pulse Duration (sec)
175
175
10
500
100
0.1
10
–2
1
0.1
100
10
1
Limited
by r
DS(on)
Source-Drain Diode Forward Voltage
V
DS
T
Single Pulse
V
0.3
C
– Drain-to-Source Voltage (V)
Safe Operating Area
T
SD
J
= 25 C
1
10
= 150 C
– Source-to-Drain Voltage (V)
–1
0.6
10
0.9
T
S-57253—Rev. B, 24-Feb-98
J
Document Number: 70263
= 25 C
1
1.2
100
10 s
100 s
1 ms
10 ms
100 ms
dc
3
1.5