ZVN2110G Diodes Inc, ZVN2110G Datasheet - Page 2
![MOSFET, N, LOGIC, SOT-223](/photos/19/8/190894/42334025_sml.jpg)
ZVN2110G
Manufacturer Part Number
ZVN2110G
Description
MOSFET, N, LOGIC, SOT-223
Manufacturer
Diodes Inc
Datasheet
1.ZVN2110G.pdf
(3 pages)
Specifications of ZVN2110G
Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
100V
On Resistance Rds(on)
4ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
2.4V
Rohs Compliant
Yes
ZVN2110G
10
8
4
10
6
2
1.6
1.2
0.8
0.4
2.0
0
5
1
0
On-resistance v gate-source voltage
1
Voltage Saturation Characteristics
0
0
V
V
GS-
DS
V
10V
Output Characteristics
V
GS=
9V
20
2
- Drain Source Voltage (Volts)
Gate Source Voltage (Volts)
GS-
8V
Gate Source Voltage (Volts)
7V
40
4
6V
10
TYPICAL CHARACTERISTICS
5V
60
6
500mA
100mA
I
1A
D
=
80
8
4V
100
100
10
I
1A
3V
100mA
500mA
D=
3 - 388
Normalised R
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
2.0
0
0
-40 -20
Saturation Characteristics
V
DS
Transfer Characteristics
- Drain Source Voltage (Volts)
V
2
GS-
2
DS(on)
T
0 20 40 60 80
Gate Source Voltage (Volts)
j
-Junction Temperature (°C)
4
and V
4
GS(th)
6
6
100
v Temperature
120
8
140 160
8
V
I
V
D=
I
GS=
D=
GS=
1 A
1mA
10V
V
DS
10
180
V
V
10
DS=
DS=
V
10V
5V
4V
7V
6V
3V
GS=
9V
8V
25V
10V