ZVN2110G Diodes Inc, ZVN2110G Datasheet - Page 2

• Manufacturer Part Number: ZVN2110G
• Description: MOSFET, N, LOGIC, SOT-223
• Manufacturer: Diodes Inc

Specifications of ZVN2110G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 2.4V
• Rohs Compliant: Yes

ZVN2110G
10
8
4
10
6
2
1.6
1.2
0.8
0.4
2.0
0
5
1
0
On-resistance v gate-source voltage
1
Voltage Saturation Characteristics
0
0
V
V
GS-
DS
V
10V
Output Characteristics
V
GS=
9V
20
2
- Drain Source Voltage (Volts)
Gate Source Voltage (Volts)
GS-
8V
Gate Source Voltage (Volts)
7V
40
4
6V
10
TYPICAL CHARACTERISTICS
5V
60
6
500mA
100mA
I
1A
D
=
80
8
4V
100
100
10
I
1A
3V
100mA
500mA
D=
3 - 388
Normalised R
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
2.0
0
0
-40 -20
Saturation Characteristics
V
DS
Transfer Characteristics
- Drain Source Voltage (Volts)
V
2
GS-
2
DS(on)
T
0 20 40 60 80
Gate Source Voltage (Volts)
j
-Junction Temperature (°C)
4
and V
4
GS(th)
6
6
100
v Temperature
120
8
140 160
8
V
I
V
D=
I
GS=
D=
GS=
1 A
1mA
10V
V
DS
10
180
V
V
10
DS=
DS=
V
10V
5V
4V
7V
6V
3V
GS=
9V
8V
25V
10V