SUP90N15-18P-E3 Vishay, SUP90N15-18P-E3 Datasheet - Page 2

• Manufacturer Part Number: SUP90N15-18P-E3
• Description: MOSFET, N, TO-220
• Manufacturer: Vishay

Specifications of SUP90N15-18P-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Configuration: Single
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 3.75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUP90N15-18P
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
V
I
Symbol
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
C
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
I
t
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
g
C
= 25 °C
V
V
V
V
DS
DS
V
I
D
GS
DS
GS
≅ 85 A, V
= 150 V, V
= 150 V, V
I
= 10 V, I
F
V
V
= 75 V, V
V
V
= 0 V, V
V
V
V
DD
b
= 50 A, di/dt = 100 A/µs
DS
V
DS
DS
DS
I
DS
F
DS
GS
Test Conditions
= 30 A, V
= 0 V, V
= 75 V, R
= V
= 150 V, V
≥ 10 V, V
= 0 V, I
= 10 V, I
= 15 V, I
f = 1 MHz
GEN
D
GS
DS
GS
GS
GS
= 20 A, T
, I
= 75 V, f = 1 MHz
= 0 V, T
= 0 V, T
= 10 V, R
D
= 10 V, I
GS
D
GS
GS
L
= 250 µA
D
D
= 250 µA
GS
= 0.88 Ω
= ± 20 V
= 20 A
= 20 A
= 0 V
= 10 V
= 0 V
J
J
J
= 125 °C
D
= 125 °C
= 150 °C
g
= 85 A
= 1 Ω
Min.
150
120
2.5
0.0145
0.029
4180
Typ.
0.52
235
130
2.1
1.0
55
83
64
23
16
15
10
25
8
8
S-80181-Rev. A, 04-Feb-08
Document Number: 69935
± 250
0.018
0.036
Max.
250
100
180
200
4.5
4.2
1.5
1.2
50
25
15
40
15
90
12
1
Unit
nA
µA
pF
nC
µC
ns
ns
Ω
Ω
V
A
S
A
V
A