NTE2998 NTE ELECTRONICS, NTE2998 Datasheet
NTE2998
Manufacturer Part Number
NTE2998
Description
MOSFET-PWR P-CH 200V 8A
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2998.pdf
(2 pages)
Features:
D High Speed Switching
D High Voltage
D High Energy Rating
D Enhancement Mode
D Integral Protection Diode
Absolute Maximum Ratings: (T
Drain−Source Voltage, V
Gate−Source Voltage, V
Continuous Drain Current, I
Body Drain Diode, I
Total Power Dissipation (T
Maximum Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Static Characteristics
Drain−Source Breakdown Voltage
Gate−Source Breakdown Voltage
Gate−Source Cut−Off Voltage
Drain−Source Saturation Voltage
Drain−Source Cut−Off Current
Forward Transfer Admittance
Parameter
D(PK)
GSS
DSX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
P−Channel, Enhancement Mode
D
= +25C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
= +25C unless otherwise specified)
C
V
(Compl to NTE2906)
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
BV
BV
= +25C unless otherwise specified)
GS(OFF)
DS(SAT)
I
DSX
y
DSX
GSS
fs
D
thJC
NTE2998
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
V
J
GS
DS
DS
GD
GS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0, I
= 10V, I
= 10V, I
= 10V, I
= 10V, V
= 0, I
Test Conditions
G
D
= 100A
= 8A, Note 1
D
D
D
DS
= 100mA
= 3A, Note 1
= 10mA
= 200V
0.15
Min
200
14
0.7
−
−
G
Typ
−
−
−
−
−
−
−55 to +150C
Max Unit
1.5
2.0
12
10
D
S
−
−
1.0C/W
+150C
125W
200V
14V
mA
V
V
V
V
S
8A
8A
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NTE2998 Summary of contents
Page 1
... Gate−Source Breakdown Voltage Gate−Source Cut−Off Voltage Drain−Source Saturation Voltage Drain−Source Cut−Off Current Forward Transfer Admittance Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. NTE2998 MOSFET High Speed Switch (Compl to NTE2906) = +25C unless otherwise specified) C ...
Page 2
Parameter Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn−On Time Turn−Off Time .350 (8.89) .312 (7.93) Min Drain .215 (5.45) .430 (10.92) C Symbol Test Conditions 10V 1MHz iss DS C oss C ...