NTE2997 NTE ELECTRONICS, NTE2997 Datasheet
NTE2997
Manufacturer Part Number
NTE2997
Description
MOSFET-PWR P-CH 160V 7A
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2997.pdf
(2 pages)
Features:
D Good Frequency Characteristics
D High Speed Switching
D Wide Area of Safe Operation
D Enhancement Mode
D Equipped with Gate Protection Diodes
Applications:
D Low Frequency Power Amplifier
Absolute Maximum Ratings: (T
Drain−Source Voltage, V
Gate−Source Voltage, V
Drain Current, I
Body to Drain Diode Reverse Drain Current, I
Channel Dissiption (T
Channel Temperature T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. Pulse test.
Drain−Source Breakdown Voltage
Gate−Source Breakdown Voltage
Gate−Source Cutoff Voltage
Drain−Source Saturation Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance
Turn−On Time
Turn−Off Time
Parameter
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25°C), P
CH
GSS
DSX
P−Channel, Enhancement Mode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
= +25°C unless otherwise specified)
A
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
C
CH
V
= +25°C unless otherwise specified)
High Speed Switch
(BR)GSS
(BR)DSS
DS(sat)
C
GS(off)
C
oss eq.
C
|y
t
t
oss
on
off
rss
iss
fs
|
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2997
MOSFET
I
I
I
I
I
V
V
V
D
G
D
D
D
DS
GS
DD
DR
= 10mA, V
= 100mA, V
= 7A, V
= 3A, V
= ±100µA, V
= 10V, f = 1MHz, V
= 20V, I
= 0, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
GS
DS
DS
D
GS
= 10V, Note 1
= 0, Note 1
= 0V to 480V, Note 5
= 4A
DS
DS
= 10V
= 10V
= 0
GS
= 5V
0.15
Min
160
±15
0.7
−
−
−
−
−
−
−
G
Typ
900
400
230
110
1.0
40
90
−
−
−
−
−55° to +150°C
Max
1.45
1.4
12
D
S
−
−
−
−
−
−
−
−
+150°C
100W
160V
Unit
±15V
pF
pF
pF
pF
ns
ns
V
V
V
V
S
7A
7A
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NTE2997 Summary of contents
Page 1
... Gate−Source Breakdown Voltage Gate−Source Cutoff Voltage Drain−Source Saturation Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn−On Time Turn−Off Time Note 1. Pulse test. NTE2997 MOSFET High Speed Switch = +25°C unless otherwise specified ...
Page 2
S .591 (15.02) .787 (20. .126 (3.22) Dia D .215 (5.47) ...