NID5001NT4G ON Semiconductor, NID5001NT4G Datasheet - Page 4

• Manufacturer Part Number: NID5001NT4G
• Description: SMART MOSFET, N, 42V, 64W, D-PAK
• Manufacturer: ON Semiconductor

Specifications of NID5001NT4G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 42V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 14VDC
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 42 V
• Gate-source Breakdown Voltage: +/- 14 V
• Continuous Drain Current: 33 A
• Power Dissipation: 64 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

0.14
0.12
0.08
0.06
0.04
0.02
0.1
0
0.3
Figure 7. Diode Forward Voltage vs. Current
V
T
V
J
GS
SD
= 25°C
0.4
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.5
0.6
0.7
TYPICAL PERFORMANCE CURVES
0.8
http://onsemi.com
NID5001N
0.9
4
0.01
100
1.0
0.1
10
0.1
V
SINGLE PULSE
T
GS
C
Figure 8. Maximum Rated Forward Biased
= 25°C
= 5 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Safe Operating Area
1.0
LIMIT
dc
Based upon a T
10 ms
1 ms
J
10
= 100°C, Steady State.
100 ms
100