IXTQ88N30P IXYS SEMICONDUCTOR, IXTQ88N30P Datasheet
IXTQ88N30P
Manufacturer Part Number
IXTQ88N30P
Description
MOSFET, N, TO-3P
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXTQ88N30P.pdf
(5 pages)
Specifications of IXTQ88N30P
Transistor Polarity
N Channel
Continuous Drain Current Id
88A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTQ88N30P
Manufacturer:
IXYS
Quantity:
18 000
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
TO-264
TO-3P & TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
JM
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
300
300
±20
±30
220
600
150
300
260
6.0
5.5
2.0
10
88
75
60
60
10
±100
100
Max.
5.0
40
1
V/ns
m Ω
mA
mJ
nA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
g
J
TO-264 (IXTK)
TO-3P (IXTQ)
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
G
D25
DS(on)
DSS
D
G
G
S
G
D
D
S
S
S
D = Drain
TAB = Drain
= 300
=
≤ ≤ ≤ ≤ ≤ 40
DS99129E(12/05)
88
D (TAB)
D (TAB)
D (TAB)
(TAB)
mΩ Ω Ω Ω Ω
A
V
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IXTQ88N30P Summary of contents
Page 1
PolarHT TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions 25° 150° C DSS 25° 150° DGR J V Continuous GS V Transient GSM I ...
Page 2
Symbol Test Conditions iss C V oss C rss t d(on d(off g(on thJC R TO-247 and TO-3P thCS R TO-264 thCS ...
Page 3
Fig. 3. Output Char acte r is tics º @ 125 10V olts D S Fig. 5. ...
Page 4
Fig. 9. Source Current vs. Source-To-Drain Voltage 280 240 200 160 120 T = 125º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 0 ...
Page 5
TO-247 (IXTH) Outline Terminals: 1. Gate 2,4. Drain 3. Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 ...