IXTH75N10 IXYS SEMICONDUCTOR, IXTH75N10 Datasheet
IXTH75N10
Manufacturer Part Number
IXTH75N10
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXTH75N10.pdf
(4 pages)
Specifications of IXTH75N10
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH75N10
Manufacturer:
IXYS
Quantity:
35 500
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2003 IXYS All rights reserved
D25
DM
GSS
DSS
J
JM
stg
DSS
DGR
GS
GSM
D
DSS
GS(th)
DS(on)
d
T
T
Continuous
Transient
T
T
T
Mounting torque
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
Test Conditions
V
J
J
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 250 µA
DSS
= 4 mA
, V
= 0.5 I
DS
= 0
D25
GS
= 1 MΩ
T
T
67N10
75N10
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
JM
IXTH / IXTM 67N10
IXTH / IXTM 75N10
IXTT 75N10
67N10
75N10
67N10
75N10
TO-204
TO-247
TO-268
min.
100
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
100
100
±20
±30
268
300
300
150
67
75
18
0.025
0.020
6
5
max.
10
±100
250
4
1
mA
nA
µA
°C
°C
°C
W
Ω
Ω
A
A
V
V
V
V
A
A
g
g
g
V
V
°C
TO-247 AD (IXTH)
Features
Applications
Advantages
G = Gate,
S = Source,
TO-268 (IXTT)
TO-204 AE (IXTM)
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
100 V
100 V
V
DS (on)
DSS
G
HDMOS
D
S
D = Drain,
TAB = Drain
67 A 25 mΩ Ω Ω Ω Ω
75 A 20 mΩ Ω Ω Ω Ω
I
TM
D25
G
process
DS91533F(9/03)
(TAB)
R
D (TAB)
DS(on)
1
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IXTH75N10 Summary of contents
Page 1
MegaMOS FET TM N-Channel Enhancement Mode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM 25°C D25 ...
Page 2
Symbol Test Conditions pulse test D25 C iss MHz oss rss t d(on) ...
Page 3
Fig. 1 Output Characteristics 200 T = 25°C J 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 Volts DS Fig vs. Drain Current DS(on) 1 25°C J ...
Page 4
Fig.7 Gate Charge Characteristic Curve 50V 37. 1mA 100 125 150 175 200 Gate Charge - ...