IXFN140N30P IXYS SEMICONDUCTOR, IXFN140N30P Datasheet
IXFN140N30P
Manufacturer Part Number
IXFN140N30P
Description
MOSFET, N, SOT-227B
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFN140N30P.pdf
(2 pages)
Specifications of IXFN140N30P
Transistor Polarity
N Channel
Continuous Drain Current Id
140A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN140N30P
Manufacturer:
OMRON
Quantity:
1 500
Part Number:
IXFN140N30P
Quantity:
127
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
D25
L
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
Lead Current Limit, RMS
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
S
ISOL
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
≤ 1 mA
= 0 V, I
= V
= ± 20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 3 mA
= 8 mA
G
= 0.5 I
, V
= 2 Ω
DS
= 0
D25
GS
= 1 MΩ
Preliminary Technical Information
DD
T
J
≤ V
= 125° C
t = 1 s
t = 1 min
DSS
IXFN 140N30P
JM
,
300
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
20
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
2500
3000
± 20
± 30
300
300
115
100
300
115
700
150
300
80
20
30
± 200
5
Max.
5.0
25
24
1
V/ns
mΩ
mA
mJ
V~
V~
nA
µA
°C
°C
°C
°C
W
g
V
V
V
V
A
A
A
A
V
V
J
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•
•
•
l
l
l
Advantages
l
l
l
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤
= 300
= 115
≤ ≤ ≤ ≤ ≤ 200 ns
S
D = Drain
D
24 mΩ Ω Ω Ω Ω
DS99571E(04/06)
S
A
V
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IXFN140N30P Summary of contents
Page 1
PolarHV HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25° 150° C DSS 25° 150° DGR J V Continuous GS ...
Page 2
... I 72 DSS D D25 60 0.18 °C/W 0.05 Characteristic Values (T = 25° C unless otherwise specified) J Min. Typ. 0.6 6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN140N30P SOT-227B Outline Max °C/W Max. 140 A 300 A 1.3 V 200 ns µC A 6,404,065 B1 6,683,344 ...