IXFH88N30P IXYS SEMICONDUCTOR, IXFH88N30P Datasheet
IXFH88N30P
Manufacturer Part Number
IXFH88N30P
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH88N30P.pdf
(5 pages)
Specifications of IXFH88N30P
Transistor Polarity
N Channel
Continuous Drain Current Id
88A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH88N30P
Manufacturer:
IXYS
Quantity:
15 500
PolarHT
Power MOSFET
© 2004 IXYS All rights reserved
N-Channel Enhancement Mode
Fast Intrinsic Diode
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
stg
L
DGR
GS
GSM
AR
D
JM
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Transient
Continuous
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
HiPerFET
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
IXFH 88N30P
IXFK 88N30P
JM
,
300
Min. Typ.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
300
300
±20
±30
220
600
150
300
2.0
88
75
60
60
10
10
6
±100
250
Max.
5.0
25
40
V/ns
mΩ
mJ
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
Advantages
TO-247 (IXFH)
TO-264 (IXFK)
G = Gate
S = Source
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
D
V
I
R
t
rr
D25
S
DSS
DS(on)
D = Drain
TAB = Drain
=
= 300
≤ ≤ ≤ ≤ ≤ 200
=
DS99216(12/04)
(TAB)
40 mΩ Ω Ω Ω Ω
88
D (TAB)
ns
A
V
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IXFH88N30P Summary of contents
Page 1
PolarHT HiPerFET TM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Transient GS V Continuous GSM ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
Fig. 1. Output Characteristics @ 10V 0 Volts D S Fig. 3. Output Characteristics @ ...
Page 4
Fig. 7. Input Adm ittance 160 140 120 100 125º 25ºC -40º 4 Volts G S Fig. 9. Source Current vs. Source-To-Drain Voltage 280 240 200 ...
Page 5
IXYS All rights reserved Fig . 13. M axim ...