IXFH12N100 IXYS SEMICONDUCTOR, IXFH12N100 Datasheet - Page 3
![MOSFET, N, TO-247](/photos/22/7/220717/ge3to24705-40_sml.jpg)
IXFH12N100
Manufacturer Part Number
IXFH12N100
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH10N100.pdf
(4 pages)
Specifications of IXFH12N100
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
1.05ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH12N100
Manufacturer:
IXYS
Quantity:
35 500
Company:
Part Number:
IXFH12N100F
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH12N100F
Manufacturer:
FSC
Quantity:
30 000
Part Number:
IXFH12N100F
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFH12N100P
Manufacturer:
SHARP
Quantity:
30 000
© 2004 IXYS All rights reserved
1.5
1.4
1.3
1.2
1.1
1.0
0.9
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
Fig. 3
Fig. 1 Output Characteristics
Fig. 5 Drain Current vs.
T
J
= 25°C
-25
T
J
= 25°C
10N100
5
Case Temperature
12N100
5
0
R
DS(on)
T
25
I
C
10
D
V
- Degrees C
- Amperes
vs. Drain Current
DS
V
GS
10
- Volts
50
= 10V
15
75
V
GS
= 15V
100 125 150
15
20
V
GS
= 10V
7V
5V
6V
20
25
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
20
18
16
14
12
10
8
6
4
2
0
-50
-50
0
Fig. 4
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
IXFH 10N100
IXFM 10N100
1
-25
-25
V
Breakdown and Threshold Voltage
GS(th)
2
Temperature Dependence
of Drain to Source Resistance
0
0
3
T
T
T
J
25
25
= 25°C
J
J
V
4
- Degrees C
- Degrees C
GS
I
D
50
50
- Volts
= 6A
5
6
75
75
7
100 125 150
100 125 150
IXFH 12N100
IXFM 12N100
BV
8
DSS
9
10