IXFH12N100 IXYS SEMICONDUCTOR, IXFH12N100 Datasheet - Page 3

• Manufacturer Part Number: IXFH12N100
• Description: MOSFET, N, TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH12N100

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 1.05ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.5
1.4
1.3
1.2
1.1
1.0
0.9
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
Fig. 3
Fig. 1 Output Characteristics
Fig. 5 Drain Current vs.
T
J
= 25°C
-25
T
J
= 25°C
10N100
5
Case Temperature
12N100
5
0
R
DS(on)
T
25
I
C
10
D
V
- Degrees C
- Amperes
vs. Drain Current
DS
V
GS
10
- Volts
50
= 10V
15
75
V
GS
= 15V
100 125 150
15
20
V
GS
= 10V
7V
5V
6V
20
25
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
20
18
16
14
12
10
8
6
4
2
0
-50
-50
0
Fig. 4
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
IXFH 10N100
IXFM 10N100
1
-25
-25
V
Breakdown and Threshold Voltage
GS(th)
2
Temperature Dependence
of Drain to Source Resistance
0
0
3
T
T
T
J
25
25
= 25°C
J
J
V
4
- Degrees C
- Degrees C
GS
I
D
50
50
- Volts
= 6A
5
6
75
75
7
100 125 150
100 125 150
IXFH 12N100
IXFM 12N100
BV
8
DSS
9
10