SI5404BDC-T1-GE3 Vishay, SI5404BDC-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI5404BDC-T1-GE3
• Description: N CHANNEL MOSFET, 20V, 7.5A, 1206
• Manufacturer: Vishay

Specifications of SI5404BDC-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 39mohm
• Rds(on) Test Voltage Vgs: 2.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5404BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
-
-
0.4
0.2
0.0
0.2
0.4
0.6
-
0.01
0.1
50
2
1
10
-
-4
0.05
0.02
25
Duty Cycle = 0.5
0.2
0.1
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
Single Pulse
I
D
50
= 250
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
µA
0.01
100
0.1
10
100
10
1
0.1
-2
Limited by R
* V
Limited
by I
125
GS
Single Pulse
D(on)
T
> minimum V
A
= 25 °C
V
150
DS
Square Wave Pulse Duration (s)
DS(on)
Safe Operating Area
-
Drain-to-Source Voltage (V)
10
1
-1
*
BVDSS Limited
GS
at which R
DS(on)
10
50
40
30
20
10
1
0
Limited by I
10
is specified
-3
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1, 10
DC
10
DM
-2
100
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
Time (s)
A
t
1
= P
S-83054-Rev. B, 29-Dec-08
t
Document Number: 73102
1
2
DM
Z
thJA
100
thJA
t
t
1
2
(t)
10
= 80 °C/W
100
600
600