SI4423DY-T1-GE3 Vishay, SI4423DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4423DY-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI4423DY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -10A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -900mV
• Power Dissipation Pd: 1.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4423DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
D
T
Threshold Voltage
= 250 µA
J
- Temperature (°C)
25
10
-3
50
Limited by R
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
100
0.1
0.1
10
DS ( on)
100
10
1
0.1
-2
* V
*
Safe Operating Area, Junction-to-Case
125
GS
> minimum V
V
150
DS
Square Wave Pulse Duration (s)
Single Pulse
T
- Drain-to-Source Voltage (V)
C
10
1
= 25 °C
-1
GS
at which R
DS(on)
10
100
1
80
60
40
20
0
0.001
is specified
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
100
0.01
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
A
S09-0705-Rev. D, 27-Apr-09
= P
0.1
t
2
Document Number: 72085
DM
Z
th J A
100
th J A
t
t
1
2
(t )
= 70 °C/W
1
600
10