SI2303BDS-T1-GE3 Vishay, SI2303BDS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2303BDS-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI2303BDS-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1.49A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 700mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si2303BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.3
- 0.6
0.1
10
0.9
0.6
0.3
0.0
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
I
D
V
= 250 µA
SD
0
T
J
Threshold Voltage
= 150 °C
- Source-to-Drain Voltage (V)
T
0.4
J
25
- Temperature (°C)
0.6
50
75
0.8
0.01
100
T
0.1
10
100
J
1
0.1
= 25 °C
1.0
by R
* V
125
Limited
Safe Operating Area, Junction-to-Case
GS
DS(on)*
> minimum V
Single Pulse
150
1.2
T
V
Square Wave Pulse Duration (s)
A
DS
= 25 °C
- Drain-to-Source Voltage (V)
1
GS
at which R
10
1.0
0.8
0.6
0.4
0.2
0.0
DS(on)
10
8
6
4
2
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
10 µs
100 µs
1 ms
10 ms
100 ms
DC, 100 s, 10 s, 1 s
0.1
2
V
GS
100
- Gate-to-Source Voltage (V)
Single Pulse Power
4
T
1
A
Time (s)
= 25 °C
I
D
S-80642-Rev. C, 24-Mar-08
= 1.7 A
Document Number: 72065
10
6
100
8
10
1000