IRFB17N50LPBF Vishay, IRFB17N50LPBF Datasheet - Page 6

• Manufacturer Part Number: IRFB17N50LPBF
• Description: N CHANNEL MOSFET, 500V, 16A, TO-220
• Manufacturer: Vishay

Specifications of IRFB17N50LPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB17N50LPBF

IRFB17N50L, SiHFB17N50L
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12a - Unclamped Inductive Test Circuit
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
R
20 V
G
V
Q
DS
GS
t
p
I
AS
D.U.T
Charge
0.01 Ω
L
Q
Q
GD
G
15 V
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Driver
480
160
800
640
320
0
This datasheet is subject to change without notice.
+
- V
25
A
DD
A
Starting T J , Junction Temperature (°C)
50
75
100
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
125
I
AS
12 V
Fig. 13b - Gate Charge Test Circuit
V
I D
GS
10 A
16 A
Same type as D.U.T.
7 A
Current regulator
0.2 µF
150
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0514-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91098
D.U.T.
V
I
D
DS
+
-
V
DS