ZXMN6A11G Diodes Inc, ZXMN6A11G Datasheet - Page 2

• Manufacturer Part Number: ZXMN6A11G
• Description: MOSFET, N CH, 60V, 4.4A, SOT-223
• Manufacturer: Diodes Inc

Specifications of ZXMN6A11G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 3.9W
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a)
(b)
(c)
ZXMN6A11G
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
For a device surface mounted on FR4 PCB measured at t 5 secs.
Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature.
(a)
(b)
(c)
A
A
=25°C
=25°C
V
V
GS
GS
GS
=10V; T
=10V; T
=10V; T
(a)
(b)
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
(b)
(b)
(a)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
2
D
DM
S
SM
D
D
j
DSS
GS
θJA
θJA
:T
stg
-55 to +150
VALUE
LIMIT
62.5
3.8
3.0
2.7
2.0
3.9
60
10
10
16
31
32
5
20
ISSUE 3 - NOVEMBER 2004
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
W
W
°C
V
V
A
A
A
A