ZXM62P03E6 Diodes Inc, ZXM62P03E6 Datasheet - Page 2
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ZXM62P03E6
Manufacturer Part Number
ZXM62P03E6
Description
MOSFET, P CH, 30V, -1.5A, SOT-23
Manufacturer
Diodes Inc
Datasheet
1.ZXM62P03E6TA.pdf
(7 pages)
Specifications of ZXM62P03E6
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
110mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
806mW
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXM62P03E6TA
Manufacturer:
ZETEX
Quantity:
23 000
Company:
Part Number:
ZXM62P03E6TA
Manufacturer:
LT
Quantity:
80
Part Number:
ZXM62P03E6TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
ZXM62P03E6TC
Manufacturer:
ZETEX
Quantity:
45 000
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=70°C)(a)
=25°C)(a)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
-55 to +150
VALUE
LIMIT
0.54
625
806
113
1.5
1.2
7.4
7.4
6.4
20
73
5
12
ZXM62P03E6
S E M I C O N D U C T O R S
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
mW
mW
°C
A
A
A
A
V
V