ZXM61N02F Diodes Inc, ZXM61N02F Datasheet - Page 4

• Manufacturer Part Number: ZXM61N02F
• Description: N CHANNEL MOSFET, 20V, 1.7A, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXM61N02F

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.7A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 700mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
ZXM61N02F
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
(at T
4
20
0.7
1.3
A
= 25°C unless otherwise stated).
TYP.(3) MAX.
160
50
30
2.4
4.2
7.8
4.2
12.9
5.2
1
100
0.18
0.24
3.4
0.41
0.8
0.95
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test
circuit)
V
I
(refer to test
circuit)
T
V
T
di/dt= 100A/ s
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=250 A, V
=250 A, V
=0.93A
=25°C, I
=25°C, I
=6.2 , R
=20V, V
=10V,I
=15 V, V
=16V,V
= 12V, V
=4.5V, I
=2.7V, I
=0V
=10V, I
D
S
F
GS
=0.47A
D
=0.93A,
=0.93A,
D
D
GS
D
GS
GS
=0.93A
DS
=0.93A
=0.47A
=11
=4.5V,
DS
=0V
=0V,
=0V
= V
=0V
GS