ZVN3310F Diodes Inc, ZVN3310F Datasheet - Page 2

• Manufacturer Part Number: ZVN3310F
• Description: N CH MOSFET, 100V, 100mA, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZVN3310F

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 100mA
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 10ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
10
1
40
50
30
20
10
160
120
On-resistance vs gate-source voltage
40
0
80
Capacitance v drain-source voltage
1
0
0
0
Transconductance v drain current
V
GS
V
0.2
-Gate Source Voltage (Volts)
DS
10
-Drain Source Voltage (Volts)
I
D
- Drain Current (Amps)
0.4
20
TYPICAL CHARACTERISTICS
0.6
30
0.8
V
DS=
10
25V
1.0
40
20
1.2
50
I
1A
0.5A
0.2A
D=
C
C
C
3 - 397
iss
oss
rss
Normalised R
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
14
12
10
16
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
8
6
4
2
0
Gate charge v gate-source voltage
0
0
-80 -60
0
Saturation Characteristics
V
DS
0.2
-40 -20 0 20 40 60 80
- Drain Source Voltage (Volts)
I
D=
DS(on)
2
0.6A
0.4
Q-Charge (nC)
T-Temperature (C°)
and V
4
ZVN3310F
0.6
I
D=-
GS(th)
0.5A
6
0.8
100
vs Temperature
V
DS
20V
120
1.0
=
8
140 160
50V 80V
1.2
10
V
10V
9V
4V
3V
8V
7V
6V
5V
GS=