SI4462DY-T1-GE3 Vishay, SI4462DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4462DY-T1-GE3
• Description: N CHANNEL MOSFET, 200V, 1.5A, SOIC
• Manufacturer: Vishay

Specifications of SI4462DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4462DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.4
- 0.8
- 1.2
0.8
0.4
0.0
0.01
- 50
0.1
2
1
10
- 25
- 4
0.05
0.2
0.1
Duty Cycle = 0.5
0.02
0
T
Threshold Voltage
J
- Temperature (°C)
25
10
- 3
Single Pulse
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.001
0.01
0.1
100
10
1
10
0.1
Limited by R
- 2
Limited
I
* V
D(on)
125
GS
Single Pulse
T
A
> minimum V
Square Wave Pulse Duration (s)
150
= 25 °C
(DS)on
V
1
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
*
- 1
BV
GS
DSS
at which R
Limited
10
I
DM
DS(on)
Limited
50
40
30
20
10
1
0.001
0
100
is specified
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.01
1000
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
0.1
- T
Time (s)
t
1
A
S09-0705-Rev. C, 27-Apr-09
= P
t
2
Document Number: 72093
DM
1
Z
thJA
thJA
100
t
t
1
2
(t)
= 70 °C/W
10
100
600
600