SI4346DY-T1-GE3 Vishay, SI4346DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4346DY-T1-GE3
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SI4346DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.31W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.1
40
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
1
= 8 A
On-Resistance vs. Drain Current
5
= 15 V
0.3
V
V
SD
T
2
GS
J
Q
= 150 °C
g
-
= 4.5 V
I
10
D
-
Source-to-Drain Voltage (V)
3
-
Total Gate Charge (nC)
Gate Charge
0.6
Drain Current (A)
4
15
5
0.9
20
T
6
V
J
GS
= 25 °C
= 10 V
1.2
7
25
8
1.5
30
9
1200
1000
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 8 A
5
= 10 V
2
V
V
T
DS
GS
0
J
-
10
- Gate-to-Source Voltage (V)
-
Junction Temperature (°C)
Drain-to-Source Voltage (V)
C
Capacitance
25
4
oss
I
D
C
15
= 8 A
50
iss
Vishay Siliconix
6
75
Si4346DY
20
www.vishay.com
100
8
25
125
10
30
150
3