SI2302ADS-T1-GE3 Vishay, SI2302ADS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2302ADS-T1-GE3
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SI2302ADS-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 950mV
• Power Dissipation Pd: 700mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS T
Document Number: 71831
S10-0047-Rev. I, 11-Jan-10
0.15
0.12
0.09
0.06
0.03
0.00
10
5
4
3
2
1
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 3.6 A
On-Resistance vs. Drain Current
= 10 V
1
1
2
V
V
DS
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
= 5 V thru 2.5 V
I
D
V
Gate Charge
- Drain Current (A)
GS
2
2
4
= 2.5 V
0 V, 0.5 V, 1 V
3
3
6
A
2 V
= 25 °C, unless otherwise noted
V
GS
4
4
8
= 4.5 V
1.5 V
10
5
5
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
C
= 3.6 A
rss
0.5
= 4.5 V
4
V
V
GS
T
Transfer Characteristics
DS
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
oss
25 °C
T
Capacitance
1.0
C
8
= 125 °C
C
iss
50
Vishay Siliconix
Si2302ADS
1.5
12
- 55 °C
www.vishay.com
100
2.0
16
2.5
150
20
3