IXTN60N50L2 IXYS SEMICONDUCTOR, IXTN60N50L2 Datasheet - Page 3

• Manufacturer Part Number: IXTN60N50L2
• Description: MOSFET,N CH,500V,53A,SOT-277B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXTN60N50L2

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-227
• Rohs Compliant: Yes

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2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0.0
0
0
Fig. 5. R
V
0.5
GS
1
20
= 10V
20V
1.0
Fig. 1. Output Characteristics
2
Fig. 3. Output Characteristics
DS(on)
40
- - - -
1.5
3
vs. Drain Current
Normalized to I
60
2.0
V
4
I
DS
D
V
@ 125ºC
@ 25ºC
DS
- Amperes
V
- Volts
GS
V
2.5
- Volts
80
GS
5
= 20V
14V
12V
10V
= 20V
12V
10V
3.0
9V
6
100
D
3.5
7
= 30A Value
120
T
J
4.0
= 125ºC
8
T
9V
8V
7V
6V
5V
8V
7V
6V
5V
J
140
= 25ºC
4.5
9
160
5.0
10
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
5
0
0
-50
-50
0
Fig. 4. R
V
GS
Fig. 2. Extended Output Characteristics
-25
-25
= 10V
Fig. 6. Maximum Drain Current vs.
5
V
DS(on)
vs. Junction Temperature
GS
0
0
= 20V
Case Temperature
T
14V
12V
10
T
C
Normalized to I
J
- Degrees Centigrade
25
25
- Degrees Centigrade
V
DS
@ 25ºC
- Volts
IXTN60N50L2
50
10V
15
50
7V
9V
8V
6V
I
D
75
75
= 60A
20
D
= 30A Value
100
100
IXYS REF: T_60N50L2(9R)01-20-09-C
25
I
D
125
125
= 30A
150
150
30