IRLZ14PBF Vishay, IRLZ14PBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRLZ14PBF
Manufacturer Part Number
IRLZ14PBF
Description
N CHANNEL MOSFET, 60V, 10A, TO-220
Specifications of IRLZ14PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 6A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
10 A
Power Dissipation
43000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
26 ns
Rise Time
110 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.2Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±10V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLZ14PBF
Available stocks
•
Lead-Free
Document Number: 91325
www.vishay.com
1
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IRLZ14PBF Summary of contents
... Lead-Free Document Number: 91325 www.vishay.com 1 ...
... Document Number: 91325 www.vishay.com 2 ...
... Document Number: 91325 www.vishay.com 3 ...
... Document Number: 91325 www.vishay.com 4 ...
... Document Number: 91325 www.vishay.com 5 ...
... Document Number: 91325 www.vishay.com 6 ...
... Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent GS Fig 15. For N-Channel Power MOSFETs Document Number: 91325 + • • - - • G • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...
... LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C TAC Fax: (310) 252-7903 06/04 www.vishay.com 8 ...
... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...
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