IRFZ30PBF Vishay, IRFZ30PBF Datasheet

IRFZ30PBF

Manufacturer Part Number

IRFZ30PBF

Description

N CHANNEL MOSFET, 50V, 30A TO-220AB

Manufacturer

Vishay

Series

HEXFET®r

Datasheet

1.IRFZ30PBF.pdf (6 pages)

Specifications of IRFZ30PBF

Transistor Polarity

N Channel

Continuous Drain Current Id

30A

Drain Source Voltage Vds

50V

On Resistance Rds(on)

50mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

50 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

50V

Current - Continuous Drain (id) @ 25° C

30A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

1600pF @ 25V

Power - Max

75W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Minimum Operating Temperature

- 55 C

Resistance Drain-source Rds (on)

0.05 Ohms

Forward Transconductance Gfs (max / Min)

12 S / 9 S

Drain-source Breakdown Voltage

50 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

30 A

Power Dissipation

75 W

Maximum Operating Temperature

+ 125 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

*IRFZ30PBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ30PBF

Manufacturer:

Vishay/Siliconix

Quantity:

1 871

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