IRFF9130 International Rectifier, IRFF9130 Datasheet - Page 2

• Manufacturer Part Number: IRFF9130
• Description: P CH MOSFET, -100V, 6.5A, TO-205AF
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFF9130

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6.5A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.345Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 6.5A
• Power Dissipation: 25W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-39
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Thermal Resistance
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
IRFF9130
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
R thJC
R thJA
BV DSS / T J
I S
I SM
V SD
t rr
Q RR
t on
(on)
(off)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
-100
14.7
Min
-2.0
2.5
1.0
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.10
Typ Max Units
175
800
350
125
7.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-6.5
-4.7
250
-25
3.0
0.345
0.30
-250
-100
34.8
-4.0
100
140
140
140
-25
7.1
°C/W
—
—
—
21
60
—
—
—
nS
µC
V
A
S ( )
V/°C
V
nH
nA
µA
nC
ns
pF
V
Typical socket mount
T j = 25°C, I F = -6.5A, di/dt
T
j
= 25°C, I S =-6.5A, V GS = 0V
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Reference to 25°C, I D = -1.0mA
V DS = V GS , I D = -250 A
V GS = -10V, I D = -4.1A
V DS > -15V, I DS = -4.1A
V GS =-10V, I D =-6.5A
Test Conditions
Test Conditions
V GS = 0V, I D = -1.0mA
V DD = -50V, I D = -6.5A,
V GS =-10V, ID = -6.5A
V GS =-10V,R G =7.5
V GS = 0V, V DS = -25V
V GS = 0V, T J = 125°C
Test Conditions
V DS = -80V, V GS =0V
V DD
V DS = -80V
V GS = -20V
f = 1.0MHz
V DS = -50V
V GS = 20V
-50V
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-100A/ s