IRFBG30PBF Vishay, IRFBG30PBF Datasheet - Page 6
![N CHANNEL MOSFET, 1KV, 3.1A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFBG30PBF
Manufacturer Part Number
IRFBG30PBF
Description
N CHANNEL MOSFET, 1KV, 3.1A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRFBG30PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
3.1A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
980pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
5Ohm
Drain-source On-volt
1kV
Gate-source Voltage (max)
±20V
Drain Current (max)
3.1A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBG30PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBG30PBF
Manufacturer:
ABRACON
Quantity:
30 000
Part Number:
IRFBG30PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFBG30, SiHFBG30
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
p
10 V
Fig. 13a - Basic Gate Charge Waveform
to obtain
V
AS
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
+
-
V
DD
A
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0517-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91124
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS