IRFB11N50APBF Vishay, IRFB11N50APBF Datasheet
IRFB11N50APBF
Specifications of IRFB11N50APBF
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IRFB11N50APBF Summary of contents
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... Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching G APPLICABLE OFF LINE SMPS TOPOLOGIES • Two Transistor Forward S • Half and Full Bridge • Power Factor Correction Boost N-Channel MOSFET TO-220 IRFB11N50APbF SiHFB11N50A-E3 IRFB11N50A SiHFB11N50A = 25 °C, unless otherwise noted ° ...
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... IRFB11N50A, SiHFB11N50A Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ...
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... Fig Normalized On-Resistance vs. Temperature Vishay Siliconix ° 150 C J ° 50V DS 20µs PULSE WIDTH 5.0 6.0 7.0 8 Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics ...
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... IRFB11N50A, SiHFB11N50A Vishay Siliconix 2400 1MHz iss rss gd 2000 oss ds gd iss 1600 oss 1200 800 rss 400 100 V , Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 6. 400V 250V 100V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91094 S-81243-Rev. B, 21-Jul-08 IRFB11N50A, SiHFB11N50A 125 150 ° SINGLE PULSE 0.001 t , Rectangular Pulse Duration ( Driver + - Vishay Siliconix D.U. 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFB11N50A, SiHFB11N50A Vishay Siliconix 600 500 400 300 200 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 660 640 620 600 580 0.0 1.0 2.0 3.0 4 Avalanche Current (A) av Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current www ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91094. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...