IRF9Z24PBF Vishay, IRF9Z24PBF Datasheet - Page 6

P CHANNEL MOSFET, -60V, 11A, TO-220

IRF9Z24PBF

Manufacturer Part Number
IRF9Z24PBF
Description
P CHANNEL MOSFET, -60V, 11A, TO-220
Manufacturer
Vishay
Datasheets

Specifications of IRF9Z24PBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Gate Charge Qg
19 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.4 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9Z24PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9Z24PBF
Manufacturer:
VIS
Quantity:
20 000
Company:
Part Number:
IRF9Z24PBF
Quantity:
15 000
IRF9Z24, SiHF9Z24
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91090_12c
This datasheet is subject to change without notice.
800
600
400
200
0
25
V
DD
+
-
Starting T
= - 25 V
V
DD
50
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
150
Fig. 13b - Gate Charge Test Circuit
V
GS
- 4.5 A
- 7.8 A
- 11 A
Same type as D.U.T.
Current regulator
I
D
175
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
t
0.3 µF
p
I
G
S11-0513-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91090
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD

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