IRF9Z14PBF Vishay, IRF9Z14PBF Datasheet - Page 3
![P CHANNEL MOSFET, -60V, 6.7A TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9Z14PBF
Manufacturer Part Number
IRF9Z14PBF
Description
P CHANNEL MOSFET, -60V, 6.7A TO-220
Manufacturer
Vishay
Specifications of IRF9Z14PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-6.7A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.7 A
Power Dissipation
43000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9Z14PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9Z14PBF
Manufacturer:
Vishay/Siliconix
Quantity:
1 936
Company:
Part Number:
IRF9Z14PBF
Manufacturer:
STM
Quantity:
6 806
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91088_01
91088_02
10
Fig. 2 - Typical Output Characteristics, T
10
10
10
Fig. 1 - Typical Output Characteristics, T
10
10
-1
-1
1
0
10
1
0
10
Bottom
-1
Top
Top
Bottom
-1
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS
V
V
DS ,
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
This datasheet is subject to change without notice.
10
10
- 4.5 V
1
1
- 4.5 V
C
C
= 175 ° C
= 25 °C
91088_03
91088_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
0
1
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
4
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
= - 6.7 A
= - 10 V
- V
5
T
GS ,
25
J ,
IRF9Z14, SiHF9Z14
Junction Temperature (°C)
°
Gate-to-Source Voltage (V)
C
6
7
www.vishay.com/doc?91000
175
Vishay Siliconix
°
20 µs Pulse Width
V
C
8
DS
= -
25 V
www.vishay.com
9
10
3