IRF9640PBF Vishay, IRF9640PBF Datasheet - Page 2

• Manufacturer Part Number: IRF9640PBF
• Description: P CHANNEL MOSFET, -200V, 11A TO-220
• Manufacturer: Vishay

Specifications of IRF9640PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 38 ns
• Rise Time: 43 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9640PBF

IRF9640, SiHF9640
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
t
t
R
C
R
R
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
SM
I
t
t
thCS
thJC
DS
oss
t
SD
on
thJA
rss
iss
gd
S
rr
fs
gs
r
D
S
f
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
J
GS
GS
V
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
Reference to 25 °C, I
= - 10 V
= - 10 V
J
= 9.1 Ω, R
= - 160 V, V
= 25 °C, I
V
V
V
V
V
DS
DD
TYP.
TEST CONDITIONS
f = 1.0 MHz, see fig. 5
0.50
DS
DS
GS
-
-
= - 50 V, I
= - 100 V, I
= - 200 V, V
F
= V
= 0 V, I
V
V
= - 11 A, dI/dt = 100 A/μs
GS
V
DS
S
GS
I
D
D
GS
= - 11 A, V
GS
= 8.6 Ω, see fig. 10
, I
= ± 20 V
= - 25 V,
= - 11 A, V
see fig. 6 and 13
= 0 V,
D
D
= 0 V, T
= - 250 μA
D
= - 250 μA
I
D
D
= - 6.6 A
GS
= - 6.6 A
= - 11 A
D
= - 1 mA
= 0 V
GS
J
DS
G
G
= 125 °C
= 0 V
= - 160 V,
b
b
MAX.
D
S
b
D
S
b
1.0
62
b
-
b
- 200
MIN.
- 2.0
4.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0513-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91086
TYP.
1200
-0.2
370
250
4.5
7.5
2.9
81
14
43
39
38
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.50
- 11
- 44
300
7.1
3.6
S
- 5
44
27
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns
Ω
V
V
S
A
V