IRF9610PBF Vishay, IRF9610PBF Datasheet - Page 2
![P CH MOSFET, -200V, 1.8A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9610PBF
Manufacturer Part Number
IRF9610PBF
Description
P CH MOSFET, -200V, 1.8A, TO-220
Manufacturer
Vishay
Specifications of IRF9610PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9610PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF9610, SiHF9610
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
T
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
J
GS
GS
R
DS
T
= 25 °C, I
G
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= - 10 V
= - 10 V
= 25 °C, I
= - 160 V, V
= 50 Ω, R
V
V
V
DD
V
V
DS
f = 1.0 MHz, see fig. 10
DS
DS
TYP.
GS
0.50
TEST CONDITIONS
= - 100 V, I
= - 50 V, I
-
-
F
= V
= - 200 V, V
= 0 V, I
V
V
= - 1.8 A, dI/dt = 100 A/µs
V
GS
DS
S
I
D
GS
D
GS
= - 1.8 A, V
= 110 Ω, see fig. 17
GS
= - 3.5 A, V
= ± 20 V
= - 25 V,
, I
see fig. 11 and 18
= 0 V,
D
D
= 0 V, T
D
= - 250 µA
D
= - 250 µA
I
D
= - 0.90 A
= - 0.90 A,
GS
= -0.90 A
D
= - 1 mA
= 0 V
GS
J
DS
G
G
= 125 °C
= 0 V
= - 160 V,
b
b
MAX.
D
S
D
S
b
6.4
b
b
62
-
b
- 200
MIN.
- 2.0
0.90
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0046-Rev. A, 19-Jan-09
Document Number: 91080
- 0.23
TYP.
170
240
8.0
8.0
4.5
7.5
1.7
50
15
15
10
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
- 1.8
- 7.0
- 5.8
S
360
3.0
7.0
4.0
2.6
11
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V