IRF840APBF Vishay, IRF840APBF Datasheet - Page 6
![N CHANNEL MOSFET, 500V, 8A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF840APBF
Manufacturer Part Number
IRF840APBF
Description
N CHANNEL MOSFET, 500V, 8A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF840APBF
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840APBF
Manufacturer:
INFINEON
Quantity:
21 000
Company:
Part Number:
IRF840APBF
Manufacturer:
VISHAY
Quantity:
4 250
Part Number:
IRF840APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRF840A, SiHF840A
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91065_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1200
1000
Vary t
required I
800
600
400
200
0
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
25
p
V
I
AS
to obtain
DS
AS
Starting T
R
50
10 V
G
V
DS
J
, Junction Temperature (°C)
t
75
p
t
p
I
AS
D.U.T
100
0.01 Ω
L
V
Top
Bottom
DS
125
This datasheet is subject to change without notice.
V
3.6 A
5.1 A
8.0 A
DD
I
D
150
+
-
V
DD
91065_12d
600
580
560
540
520
10 V
Fig. 12d - Basic Gate Charge Waveform
Fig. 13a - Typical Drain-to-Source Voltage vs.
12 V
V
0.0
Fig. 13b - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
Current regulator
1.0
Q
0.2 µF
GS
2.0
I
AV
Current sampling resistors
3 mA
50 kΩ
Avalanche Current
, Avalanche Current (A)
Charge
Q
3.0
0.3 µF
Q
GD
G
I
G
4.0
S11-0506-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91065
D.U.T.
5.0
I
D
6.0
+
-
V
DS
7.0
8.0