IRF740PBF Vishay, IRF740PBF Datasheet - Page 4

• Manufacturer Part Number: IRF740PBF
• Description: N CHANNEL MOSFET, 400V, 10A, TO-220
• Manufacturer: Vishay

Specifications of IRF740PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF740PBF

IRF740, SiHF740
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
91054_05
91054_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
2500
2000
1500
1000
500
20
16
12
0
8
4
0
10
0
0
I
D
= 10 A
V
DS ,
15
Q
Drain-to-Source Voltage (V)
V
G
, Total Gate Charge (nC)
DS
= 80 V
V
DS
30
V
C
C
C
GS
iss
rss
oss
= 200 V
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
10
gs
gd
ds
45
= 320 V
C
C
1
+ C
C
+ C
iss
oss
rss
gd
gd
, C
For test circuit
see figure 13
This datasheet is subject to change without notice.
ds
60
Shorted
75
91054_07
91054_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
Fig. 8 - Maximum Safe Operating Area
10
3
0
-1
5
2
5
2
5
2
1
5
2
1
0.50
2
0.1
2
V
V
DS
0.70
SD
5
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
150
1
2
°
C
0.90
by R
5
25
S11-0507-Rev. C, 21-Mar-11
10
°
www.vishay.com/doc?91000
DS(on)
C
Document Number: 91054
1.10
T
T
Single Pulse
2
C
J
= 150 °C
= 25 °C
5
10
1.30
2
V
2
GS
= 0 V
10
100
1
10
5
ms
1.50
µs
10
ms
µs
3